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An SEM and STM investigation of surface smoothing in 130 MeV Si-irradiated metglass MG2705M

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dc.contributor.author Narayan, Himanshu
dc.contributor.author Samanta, S. B.
dc.contributor.author Agrawal, H. M.
dc.contributor.author Kushwaha, R. P. S.
dc.contributor.author Kanjilal, D.
dc.contributor.author Sharma, S. K.
dc.contributor.author Narlikar, A. V.
dc.date.accessioned 2016-12-08T15:32:48Z
dc.date.available 2016-12-08T15:32:48Z
dc.date.issued 1999
dc.identifier.issn 1361-648X (online)
dc.identifier.issn 0953-8984 (print)
dc.identifier.uri http://repository.tml.nul.ls/handle/20.500.14155/1139
dc.description.abstract Metglass MG2705M foils of about 17 m thickness were irradiated at 90 K by 130 MeV 28Si ions, up to a fluence of 1:154 1016 ions cm−2. The surface modifications induced by irradiation have been examined by scanning electron microscopy (SEM) and scanning tunnelling microscopy (STM). It has been observed that smoothing of the sample surface is evident in both SEM and STM micrographs. The SEM pictures show a decrease in the heights of the ‘hills’ and filling up of the ‘valleys’ on micrometre length scales. The STM pictures, on the other hand, show smoothing of scratchlike surface disorders at nanometre length scales. However, the electronic energy loss Se, of 5:75 keV nm−1, does not lead to detectable track diameters, in agreement with the existing results. The observations have been attributed to a large electronic energy deposition due to high fluence, and a subsequent local shear relaxation of the near surface atoms. The theory of shear flow mechanism has been extended further to explain the results. en_ZA
dc.language.iso en en_ZA
dc.publisher IOP Publishing Ltd en_ZA
dc.rights © 1999 IOP Publishing Ltd en_ZA
dc.source Journal of Physics: Condensed Matter, Volume 11 (1999) 2679–2687 en_ZA
dc.title An SEM and STM investigation of surface smoothing in 130 MeV Si-irradiated metglass MG2705M en_ZA
dc.type Article en_ZA


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